首頁 >2SJ479(L)|2SJ479(S)>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SiliconPChannelDV-LMOSFETHighSpeedPowerSwitching Features ?Lowon-resistanceRDS(on)=25m?typ. ?4Vgatedrivedevices. ?Highspeedswitching | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistanceRDS(on)=25m?typ. ?4Vgatedrivedevices. ?Highspeedswitching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistanceRDS(on)=25m?typ. ?4Vgatedrivedevices. ?Highspeedswitching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistanceRDS(on)=25m?typ. ?4Vgatedrivedevices. ?Highspeedswitching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconPChannelDV-LMOSFETHighSpeedPowerSwitching Features ?Lowon-resistanceRDS(on)=25m?typ. ?4Vgatedrivedevices. ?Highspeedswitching | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features ?Lowon-resistanceRDS(on)=25m?typ. ?4Vgatedrivedevices. ?Highspeedswitching | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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